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Moos, E.N.; Vladimirov, A.F.
International Atomic Energy Agency, Viena (Austria); Centro de Estudios Aplicados al Desarrollo Nuclear, La Habana (Cuba); Agencia de Energia Nuclear, La Habana (Cuba); Instituto Superior de Ciencia y Tecnologia Nuclear, La Habana (Cuba); Centro de Informacion de la Energia Nuclear, La Habana (Cuba); Centro de Tecnologia Nuclear, La Habana (Cuba); Instituto de Investigaciones Fundamentales de la Agricultura Tropical, La Habana (Cuba)2001
International Atomic Energy Agency, Viena (Austria); Centro de Estudios Aplicados al Desarrollo Nuclear, La Habana (Cuba); Agencia de Energia Nuclear, La Habana (Cuba); Instituto Superior de Ciencia y Tecnologia Nuclear, La Habana (Cuba); Centro de Informacion de la Energia Nuclear, La Habana (Cuba); Centro de Tecnologia Nuclear, La Habana (Cuba); Instituto de Investigaciones Fundamentales de la Agricultura Tropical, La Habana (Cuba)2001
AbstractAbstract
[en] The problem to install the relationship between an electron density near surface of solid state and them energy distribution on trace analysis is known. It is very important for development of an electron and ion spectroscopy. There is a question about possibility to obtain information from secondary ion flux about a work function, a right experimental results, and the beam influence on surface condition also. With these problems connect the solution of the tasks about electron exchange and transmission coefficient through a potential barrier of solid state. In the report the structure of a potential barrier and electron density distribution near the surface are discussed. The offered approach allows us to explain still not clear contortions in a low energy part distribution. More over it is firth attempt to discover Friedel oscillation from the analytical microbeam signal.At existing representation the vertex of a resulting course of a potential is defined by forces of a mirror image and external field near an analyzable sample in research condition. The electron density oscillation (Friedel oscillation) in upper atom layers are obtain for non smooth potential. The consideration gives a new correction distinguished from accepted to the correction till the Schottky. The proposed quantum-statistical approach a surface potential allow us to connect the intensity of analytical ion signal with a work function value. For example a work function of (100) epitaxial GaAs structure from secondary Ga+ and As+ fluxes are determinate. It s value appear as a reasonably correct. The results of the impurities trace analysis in epitaxial GaP and GaAs in connection with technology are discussed. The possible influence of one and a rule of dipole layer on an emitting electron are discussed. The affect of inter plane distance as with the corresponding form of a barrier is taken an account. It is connected with a double electrical layer near to geometrical solid state boundary. XPS and SIMS analytical data on these conditions are considered, too
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2001; 1 p; 3. NURT 2001; La Habana (Cuba); 22-26 Oct 2001; Available from the library of the CIEN E-mail: katia@cien.energia.inf.cu; belkis@cien.energia.inf.cu; Published only in CD-ROM
Record Type
Miscellaneous
Literature Type
Conference
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