[en] By bombarding solid targets, we deposited Si_1-xGe_x thin films by sputtering without using inflammable CVD (chemical vapor deposition) gases. After the B⁺ -implanted Si_1-xGe_x films were thermally annealed, they were characterized. As the content of Ge increased, the refractive index increased and the band edge narrowed. The higher the annealing temperature, the lower the resistivity. For Si_1-xGe_x films with a high Ge content (X∼0.5), the flat-band voltage of the gate deduced from C-V curve was adjusted to the middle point between p⁺ and n⁺ polySi gates. Boron-doped SiGe films are promising gate materials for MOS (metal oxide semiconductor) and SOI (silicon on insulator) transistors driven at low driving voltage