[en] The analysis of data on intentional regulation of defect and impurity states in silicon shows that, despite intense research on modification of silicon by different admixtures introduced at crystal growing or by thermal diffusion, ion implantation and nuclear transmutation, problem of enhancing of stability of properties and parameters of semiconductor materials remains highly topical. The introduction of admixtures by above techniques is known to be accompanied by formation of thermal and radiation defects and their complexes, significantly worsening parameters of semiconductor materials and devices. Therefore, selective introduction of certain stabilizing admixtures that lead to neutralization or self-compensation of these thermal and radiation defects with simultaneous preserving of main electrophysical parameters of silicon is a task of great importance to which this work is devoted. To choose such admixtures we analyze equation of electro neutrality for semiconductor with a set of donor and acceptor levels. To solve this equation Microsoft Excel based program has been developed. On the base of theoretical calculations by this program and experimental studies of type, nature and parameters of defect states in silicon it is concluded that to neutralize radiation and thermal defects it is advisable to use the impurities Ag and Zn (that form acceptor levels in the lower part of silicon band gap) in p-Si for donor type defects and the impurities Ag and S (that form donor levels in the upper half of silicon band gap) in n-Si for acceptor type defects. The calculations of chemical potential of silicon doped by thermal diffusion with different concentrations of donor and acceptor levels of Ag, S and Zn, as well as with radiation defects in a wide range of their concentrations, and the measurements of resistivity, concentration and life time of charge carriers in doped samples before and after ⁶⁰Co gamma-ray irradiation with fluences of 5·10¹⁶ -5·10¹⁸ cm^-2 has shown that existence of donor levels of Ag and S in the upper half of silicon band gap and acceptor levels of Ag and Zn in the lower part of silicon band gap noticeably stabilizes electrical and recombination parameters of silicon with preserving the initial electrophysical parameters of the material