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Tighineanu, I.; Dorogan, V.; Suruceanu, G.
Universitatea Tehnica din Moldova (Moldova, Republic of)2003
Universitatea Tehnica din Moldova (Moldova, Republic of)2003
AbstractAbstract
[en] The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions
Original Title
Dioda laser semiconductoare integrata cu dublor de frecventa
Primary Subject
Source
The Official Bulletin of Industrial Property, Chisinau (MD); (no.3/2003); 29 Mar 2003; 29 Mar 2003; [34 p.]; MD PATENT DOCUMENT 2131/13/F2; MD PATENT APPLICATION 2000/0120; Available from The State Agency for Industrial Property, Chisinau (MD); Application date: 29 Mar 2003
Record Type
Patent
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