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[en] An analysis of the performance of X-ray pixel detectors based on SI-GaAs doped with Cr has been carried out. An analytic form for electron and hole currents of a pixel has been obtained. The detector based on our material has high charge-collection efficiency only when the pixel contacts are anodes in contrast to LEC SI-GaAs. The mean charge collected on pixel contact is calculated for radiation energies of 30 and 60 keV (charge is averaged over all monoenergetic photons irradiating the detector cell)
Journal
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment; ISSN 0168-9002; 
; CODEN NIMAER; v. 509(1-3); p. 52-55
; CODEN NIMAER; v. 509(1-3); p. 52-55