[en] We report the characterization of the ceramic SrIn_0.1Ti_0.9O₃ thin film grown by laser molecular-beam epitaxy. The lattice constant is determined to be 0.3948 nm, slightly larger than that of the SrTiO₃ substrate. Hall measurement confirms that this film is a p-type semiconductor either below 92 K or above 158 K. X-ray photoemission spectroscopy study shows that the width of the valence band of the p-type SrIn_0.1Ti_0.9O₃ film is narrower than that of the n-type SrNb_0.1Ti_0.9O₃ film. There is a 0.35 eV difference in the Fermi energy level of the two films. The electronic state of the surface layer of the SrIn_0.1Ti_0.9O₃ film is found to be different from that of its interior