[en] The influence of the previously produced deformation in silicon structure by means of macro-scratch surface covering on the sputtering processes under following irradiation by swift ⁸⁶Kr ions is studied. The significant leveling of surface relief of irradiated silicon was observed using atomic force microscopy method (AFM), in particular it takes place for smoothing of micro-stratches produced by mechanical polishing of silicon initial plates. The experimental studies of irradiated surface allowed one to conclude that it is impossible to explain the surface changes only by elastic cascade mechanism as it was calculated using the computer code TRIM-98, because the calculated sputtered layers of silicon at ion fluence Φ_Kr = 1.3 · 10¹⁴ ion/cm² should be ΔH_Sputtering^Kr = 5.5 · 10^-3Armstrong. Correspondingly, the surface changes should be explained by one of the mechanisms of inelastic sputtering. The macro-cracks on the surface were observed near the scratches. It means that the significant mechanical strains take place in silicon single crystal stimulated by swift krypton heavy ion irradiation