[en] Inorganic scintillators with fast luminescence decay time, high density and high light output have been the object of studies for application in nuclear physics, high energy physics, nuclear tomography and other fields of science and engineering. Scintillation crystals based on cesium iodide (CsI) are matters with relatively low higroscopy, high atomic number, easy handling and low cost, characteristics that favor their use as radiation detectors. In this work, the growth of pure CsI crystals, CsI:Br and CsI:Pb, using the Bridgman technique, is described. The concentration of the bromine doping element (Br) was studied in the range of 1,5x10^-1 M to 10^-2 M and the lead (Pb) in the range of 10^-2 M to 5x10^-4 M. To evaluate the scintillators developed, systematic measurements were carried out for luminescence emission and luminescence decay time for gamma radiation, optical transmittance assays, Vickers micro-hardness assays, determination of the doping elements distribution along the grown crystals and analysis of crystals response to the gamma radiation in the energy range of 350 keV to 1330 keV and alpha particles from a ²⁴¹Am source, with energy of 5.54 MeV. It was obtained 13 ns to 19 ns for luminescence decay time for CsI:Br and CsI:Pb crystals. These results were very promising. The results obtained for micro-hardness showed a significant increase in function of the doping elements concentration, when compared to the pure CsI crystal, increasing consequently the mechanical resistance of the grown crystals. The validity of using these crystals as radiation sensors may be seen from the results of their response to gamma radiation and alpha particles. (author)