[en] Zinc Selenide (ZnSe), having a band gap of about 2.7 eV at room temperature, is an efficient light emitting semiconductor in the blue-green spectral region. Therefore, it is a promising materials for optoelectronic applications, as for the fabrication of light emitting diodes and semiconductor lasers. We have deposited ZnSe films on quartz substrate by means of PLA technique. The structural and optical properties of the deposited films have been investigated by means of X-ray diffraction (XRD), reflectance, absorption and photoluminescence (PL) measurements. The XRD spectra have shown that the films grow highly oriented along the (111) direction. Reflectance and absorption spectra as a function of the temperature have been analysed by means of classical models, in order to obtain the temperature dependence of the band gap energy and line-width broadening. The band gap energy is red-shifted for ZnSe films on quartz with respect to that of a ZnSe single crystal, because of lattice and thermal strains. The PL measurements show that PLA is a technique suitable to grow films having intrinsic luminescence even at room temperature. (Authors)