[en] The c-axis oriented epitaxial thin films of YBa₂Cu₃O_7-σ were grown by low pressure (∼10^-3 torr) RF-magnetron sputtering on various substrates under different deposition conditions. The films have been analyzed for their growth behavior and surface morphology using atomic force microscopy. The growth of these films under conditions of low total pressure, low partial pressure of oxygen and of higher RF-power assists the ad-atom mobility. This leads to a two-dimensional (2-D) layer-by-layer growth. The resulting films are observed to be free from overgrowths and undesired phases. It was observed that the films, up to a thickness of 250 nm, grew layer-by-layer and formed steps of height 2c. Atomically flat regions extending over ∼100-150 nm were observed on the films grown on SrTiO₃ as well as on MgO and other substrates. In addition, only one pit was observed in an area of 3.5 μm x 3.5 μm of the film. All these features show the potential suitability of the films for HTS device applications. (Authors)