[en] Irradiation of dielectrics with ions is available for aims of the optical, mechanical and other properties modification. The defect localized states effect on alumina optical absorption properties depends on ability of incorporated elements to substitute the lattice cations. The complex energetic spectrum of the defect localized states demands the generalized approaches which characterize the radiation induced disorder in materials as a whole. The Urbach's rule criteria for the absorption spectra of alumina irradiated with the silicon, chromium and titanium ions (Φ=10¹⁷ cm^-2, E_i=100 keV) were investigated. The induced defect, their clusters and hard solid solution effect on the Urbach's equation parameters was determined. Analysis the reasons of the absorption change was given. Absorption spectra of irradiated alumina were subjected the Urbach's rule as all it criteria were fulfilled. This is stipulated by the static disorder in crystalline lattice induced by substitution defects, intrinsic defects and cluster formation on its base. A common focal point in absorption spectrums situated at 4.4 eV was fixed. This Urbach's focus is determine by the processes of defects clusterization, the energetic characteristics of clusters and depend on ability of the implanted ions to form the hard solid solutions in alumina. A correlation between the interband and exponential absorption parameters indicates to synthesis in Al²O³ a new strongly defect material having band gap width near the 4.5 eV and absorption edge stipulated by the defect cluster levels. (authors)