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[en] In this article carbon co-implantation and step-by-step thermal treatments of shallow p+-n-junctions formation were used with the purpose of reduction of boron transient enhanced diffusion. A substantial improvement of the electrical parameters of shallow p+-n-junctions has been achieved by using the additional carbon implantation and step-by-step thermal treatments. (authors)
Source
Anishchik, V.M. (ed.) (Belarusian state univ., Minsk (Belarus)); Belorusskij gosudarstvennyj universitet, Minsk (Belarus); Natsional'naya akademiya nauk Belarusi, Minsk (Belarus); Ministerstvo obrazovaniya Respubliki Belarus', Minsk (Belarus); Gosudarstvennyj komitet po nauke i tekhnologiyam, Minsk (Belarus); Belorusskij innovatsionnyj fond, Minsk (Belarus); Belorusskij respublikanskij fond fundamental'nykh issledovanij, Minsk (Belarus); Belorusskoe fizicheskoe obshchestvo, Minsk (Belarus); 412 p; ISBN 978-985-476-530-3; 
; Sep 2007; p. 208-210; 7. International conference 'Interaction of radiation with solids'; 7. Mezhdunarodnaya konferentsiya 'Vzaimodejstvie izluchenij s tverdym telom'; Minsk (Belarus); 26-28 Sep 2007; 7 refs., 4 figs.
; Sep 2007; p. 208-210; 7. International conference 'Interaction of radiation with solids'; 7. Mezhdunarodnaya konferentsiya 'Vzaimodejstvie izluchenij s tverdym telom'; Minsk (Belarus); 26-28 Sep 2007; 7 refs., 4 figs.