[en] Metal-silicon interaction is investigated intensively because of its great importance for electronic devices fabrication. In our work we have fabricated Me/Si structures (Me=Ti, Co) by method which we called self-ion assisted deposition (SIAD) technique and have investigated composition and damage of silicon during process of SIAD. Titanium and cobalt layers were deposited on (100) oriented silicon wafers using a resonance vacuum arc ion source. Substrate, silicon wafers, were floated to a negative potential with respect to the source of 7 kV to accelerate the ion species. The composition of the deposited films and radiation damage of silicon were investigated using Rutherford Backscattering Spectroscopy and Channeling of He⁺ ions with E₀=2,0 MeV. RBS data for concentration against depth were compared with data from the RUMP code simulation. We have shown that coating deposited on silicon include not only metal atoms but also carbon, oxygen, hydrogen and silicon (from substrate). The defects in silicon generated by irradiation with Ti⁺ and Co⁺ ions are concentrated near the thin film and Si substrate interface. But generally it is shown that damage of substrate depends on the procedure of Me/Si structure preparation. The interstitial Si atoms, generated by radiation effect, diffuse at deposition of thin coating, both in a depth of a wafer, and in coating. (authors)