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AbstractAbstract
[en] The object of this thesis was the study of ion-beam induced damage formation and annealing in crystalline and conventionally predamaged Ge, GaAs, and InP. The samples were irradiated either at ∼80 K or at room temperature with Kr, Xe, or Au ions with specific energy of about 0.3 MeV/u to 3 MeV/u. Thereafter the samples were studied by means of Rutherford backscattering spectroscopy and/or transmission electron microscopy
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Source
7 Nov 2006; 92 p; Diss. (Dr.rer.nat.)
Record Type
Miscellaneous
Literature Type
Thesis/Dissertation
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Country of publication
ANNEALING, DAMAGE, GALLIUM ARSENIDES, GERMANIUM, GOLD IONS, INDIUM PHOSPHIDES, ION COLLISIONS, KRYPTON IONS, MEV RANGE 100-1000, MEV RANGE 10-100, PHYSICAL RADIATION EFFECTS, RUTHERFORD BACKSCATTERING SPECTROSCOPY, TEMPERATURE RANGE 0065-0273 K, TEMPERATURE RANGE 0273-0400 K, TRANSMISSION ELECTRON MICROSCOPY, XENON IONS
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