[en] The authors submit the data concerning the methods of obtaining of obtaining semiconductor scintillators on the basis of the zinc chalcogenide crystal doped with impurities (Te, Cd, O, Me^III-metals Al, In, etc.). Characteristics of such crystals and mechanisms for the semiconductor scintillator luminescence are described as well. The scintillator luminescence spectra maximums are located within the range 450-640nm, which depends on the method of preparing the scintillator. The luminescence decay time ranges within 0.5-10μs and 30-150μs. The afterglow level is less than 0.01% after 10-20μs, and the radiation stability is ≥5·10⁸rad. Thermostability of the output characteristics of new semiconductor scintillators on the basis of zinc selenide is prescribed by thermodynamic stability of the principal associative radiative recombination centers that come into existence due to the crystal lattice inherent imperfections. Certain application fields of the new scintillators are examined taking into account their particular qualities