[en] The density functional theory (DFT) B3LYP method is used to theoretically investigate the interaction of O₂ with the β-Si₃N₄ surface (0 0 0 1) at 1200 deg. C. All the calculations have been performed at the 6-31G* basis set level using H-saturated cluster. From the total energy minimization, the chemisorption on the center of the molecule lying above an Si site and the molecular axis paralleling to the surface is the most stable. After adsorption, the O-O bond is easier to dissociate compared to the free O₂. The electron transferred from the substrate to the O₂ molecule occupies the O₂ anti-bonding orbital, thus leading to a weakening off the bond strength, which is reflected by the elongated O₂ bond length. The changing trend of the O-O population and vibrational frequency is consistent with the change of the O-O bond length. The significant chemisorption energy and the short adsorption bond length indicate that the oxidation occurs on the β-Si₃N₄(0 0 0 1) surface at 1200 ^oC more easily