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AbstractAbstract
[en] Vanadium oxide films were fabricated by two techniques-reactive deposition in oxygen-containing plasma and metal vanadium vacuum deposition with subsequent oxidation in air. It has been shown that the latter process allows formation of the films having reduced phase transition temperature ∼50 oS. The proposed capacitor design of sensitive element excludes electrical contacts to vanadium oxide, so the element is less crytical to degradation and current noise effects
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Source
S0921-5107(07)00285-1; Available from http://dx.doi.org/10.1016/j.mseb.2007.06.026; Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
Journal
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology; ISSN 0921-5107;
; CODEN MSBTEK; v. 141(3); p. 108-114

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