[en] The spectra of infrared transmittance and photoluminescence of thin-film nc-Si/SiO₂ structures containing nanocrystalline silicon (nc-Si) and subjected to ionizing radiation (⁶⁰Co) in the dose range D= 10⁴-10⁷ rad are studied. It is shown for the first time that low radiation doses (5 x 10³ rad < D < 10⁵ rad) lead to significant (as large as 40%) increases in the intensity of the photoluminescence band at 1.33 eV. The infrared spectra indicate that there is no variation in the composition and structure of the nanocomposite. The observed effect is accounted for by structural ordering of the nanocrystal-matrix interface; this ordering is stimulated by low-dose irradiation, i.e., removal of defects (recombination centers) at the nc-Si/SiO₂ interfaces and resulting enhancement of the radiative-recombination channel