[en] In₂O₃:F (IFO) films were deposited onto crystalline silicon and glass by the pyrosol method. The effect of temperature and oxygen in the course of deposition and also of subsequent annealings in various media on the photovoltaic properties of the IFO/Si structure was measured. It is found that IFO forms a rectifying contact to p-Si, makes it possible to obtain a high photovoltage U_p = 586 mV and an internal quantum yield higher than 97% for the IFO/(pp⁺)Si structure, and features a low (0.3-0.4 Ω cm) resistivity. An increase in U_p is stimulated by an increase in the temperature of the IFO deposition, a low content of oxygen in the carrier gas, and annealing in argon with methanol vapors. It is concluded that oxygen profoundly affects the surface of the IFO grains and that the transition layer greatly affects the photovoltaic properties of the IFO/(pp⁺)Si structures