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Kuznetsov, V. P.; Alyabina, N. A.; Bozhenkin, V. A.; Belova, O. V.; Kuznetsov, M. V., E-mail: Kuznetsov_VP@mail.ru2008
AbstractAbstract
[en] Silicon layers are grown by sublimation molecular beam epitaxy at the rate 1 μm h-1 at temperatures 500-900 deg. C in vacuum at the pressure 10-5 Pa. The possibility of varying the Sb concentration in the Si layers in the range from 1015 to 1020 cm-3 by varying the temperature of epitaxy is shown. The potentialities of different modes of vacuum evaporation of Si and dopants are analyzed
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Copyright (c) 2008 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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