[en] Results obtained in a study of spectrometric characteristics of arrays of four detectors based on 4H-SiC ion-implantation-doped p⁺-n junctions in the temperature range 25-140 deg. C are reported for the first time. The junctions were fabricated by ion implantation of aluminum into epitaxial 4H-SiC layers of thickness ≤45 μm, grown by chemical vapor deposition with uncompensated donor concentration N_d - N_a = (4-6) x 10¹⁴ cm^-3. The structural features of the ion-implantation-doped p⁺-layers were studied by secondary-ion mass spectrometry, transmission electron microscopy, and Rutherford backscattering spectroscopy in the channeling mode. Parameters of the diode arrays were determined by testing in air with natural-decay alpha particles with an energy of 3.76 MeV. The previously obtained data for similar single detectors were experimentally confirmed: the basic characteristics of the detector arrays, the charge collection efficiency and energy resolution, are improved as the working temperature increases