Simulation of the fluctuations of energy and charge deposited during e-beam exposure

Borisov, S. S.; Zaitsev, S. I.; Grachev, E. A.

doi:10.1134/S1063782607080015

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Primary Subject
MATERIALS SCIENCE (1)

Subject Area
Nuclear Materials (1)

Record Type
Journal Article (1)

Literature Type

Conference Title

Journal Title
Semiconductors (1)

Publication Year
2007 (1)

Publication Year Range

2006 – 2010 (1)

Country of publication
United States (1)

Language
English (1)

Descriptors
BEAMS (1)
DEPOSITION (1)
ELECTRON BEAMS (1)
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39 (1)

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DOI

Simulation of the fluctuations of energy and charge deposited during e-beam exposure

Borisov, S. S.; Zaitsev, S. I.; Grachev, E. A., E-mail: Sergebor@mail.ru2007

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AbstractAbstract

[en] The stochastic nature of an energy and charge deposition process is examined using a model based on discrete loss approximation (DLA). Deposited energy deviations computed using the continuous slowing down approximation (CSDA) and DLA are compared. It is shown that CSDA underestimates fluctuations in deposited energy

Primary Subject

MATERIALS SCIENCE (S36)

Source

Record Type

Journal Article

Journal

Semiconductors; ISSN 1063-7826;

; CODEN SMICES; v. 41(8); p. 877-878

Country of publication

United States

Descriptors (DEI)

DEPOSITION, ELECTRON BEAMS, FLUCTUATIONS, SIMULATION, STOCHASTIC PROCESSES

Descriptors (DEC)

BEAMS, LEPTON BEAMS, PARTICLE BEAMS, VARIATIONS

LanguageLanguage

English

Reference NumberReference Number

39098096

INIS VolumeINIS Volume

INIS IssueINIS Issue

External URLExternal URL

http://dx.doi.org/10.1134/S1063782607080015

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