[en] The magnetic-field dependences of the Hall coefficient and transverse magnetoresistance are studied experimentally and theoretically in p-Bi₂Te₃ crystals doped heavily with Sn and grown by the Czochralski method in the case of both classical and quantizing magnetic fields as high as 12 T with the magnetic-field orientation along the C₃ trigonal axis. The Shubnikov-de Haas effect and quantum oscillations of the Hall coefficient were measured at temperatures of 4.2 and 11 K. The six-ellipsoid Drabble-Wolfe model of the energy spectrum and the magnetic-field dependence of the Hall coefficient are used as the basis for the method for determining the Hall factor and Hall mobility. New evidence is obtained in support of the existence of the narrow band of impurity Sn states occupied partially with electrons against the background of the light-hole band spectrum. The parameters of impurity states are estimated including their energy (E_Sn ∼ 15 meV), the broadening (Γ < kT), and the radius of localization of the impurity state (R ∼ 30 A)