[en] Experimental results of studying the photoconductivity kinetics in silicon doped with either gold or sulfur are reported. The nonequilibrium charge-carrier concentration was generated by the effect of pulsed laser radiation. The time dependence of nonequilibrium conductivity was determined by contactless measurements from a variation in the reflected power of the microwave field. The long-term photoconductivity with the time constant of τ ∼ 1.6 ms at room temperature is observed in the silicon samples overcompensated with sulfur. Conventional short-term processes (τ ∼ 2-3 μs) characteristic of the centers with deep levels are observed in the silicon samples doped with gold. These differences are accounted for using the known data on the energy characteristics of the gold and sulfur levels in the silicon band gap and their charge states