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AbstractAbstract
[en] Current-voltage characteristics of Al/SiO2/c-Si structures with silicon nanocrystals (nc-Si) in the oxide layer are studied in a wide temperature range. The analysis based on the experimental data has shown that thermostimulated tunneling via electron states in nc-Si is a most probable mechanism of charge carrier transport in these structures
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Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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