Diffusion of terbium in silicon

Nazyrov, D. E.

doi:10.1134/S1063782606060029

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Primary Subject
MATERIALS SCIENCE (1)

Subject Area
Nuclear Materials (1)

Record Type
Journal Article (1)

Literature Type

Conference Title

Journal Title
Semiconductors (1)

Publication Year
2006 (1)

Publication Year Range

2006 – 2010 (1)

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United States (1)

Language
English (1)

Descriptors
DIFFUSION (1)
ELEMENTS (1)
METALS (1)
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39 (1)

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39 (1)

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DOI

Diffusion of terbium in silicon

Nazyrov, D. E., E-mail: dnazirov2004@mail.ru2006

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AbstractAbstract

[en] The diffusion of terbium in silicon in the temperature range of 1100-1250 deg. C is studied using the direct radioisotope technique for the first time. The diffusion parameters of terbium in silicon are determined

Primary Subject

MATERIALS SCIENCE (S36)

Source

Record Type

Journal Article

Journal

Semiconductors; ISSN 1063-7826;

; CODEN SMICES; v. 40(6); p. 630-631

Country of publication

United States

Descriptors (DEI)

DIFFUSION, SILICON, TEMPERATURE RANGE 1000-4000 K, TERBIUM

Descriptors (DEC)

ELEMENTS, METALS, RARE EARTHS, SEMIMETALS, TEMPERATURE RANGE

LanguageLanguage

English

Reference NumberReference Number

39098607

INIS VolumeINIS Volume

INIS IssueINIS Issue

External URLExternal URL

http://dx.doi.org/10.1134/S1063782606060029

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