[en] The frequency dependences of the conductivity and capacitance of anisotropic porous silicon prepared by electrochemical etching of single-crystal p-Si (110) wafers were studied. It was found that the conductivity in the direction of the largest size of silicon nanocrystals is much higher than in the direction of their smallest size in the entire frequency (5 Hz-13 MHz) and temperature (170-370 K) ranges under study. An analysis of experimental data showed that the major cause of the electrical transport anisotropy is the anisotropy of silicon nanocrystals forming the samples of porous silicon under study