[en] The CdTe:Si single crystals with Si concentration in the range of C_Si⁰=2x10¹⁸-5x10¹⁹ cm^-3 are grown by the Bridgman-Stockbarger method. The samples were of the n-and p-type with electrical conductivity σ=2x10^-1-8x10^-9 Ω^-1 cm^-1. Being heated in the temperature range 300-440 K, the p-CdTe crystals were annealed, and their conductivity decreased. The shape of the low-temperature (5-20 K) photoluminescence spectra of the samples are indicative of their high structural quality. The specific feature of the emission of the CdTe:Si crystals is its decrease in the intensity of all lines induced by donors as the samples are cut progressively closer to the ingot top. The results obtained indicate that the Si impurity, in contrast with Ge, Sn, and Pb, does not exhibit the compensating and stabilizing effect in CdTe