[en] The role of the impurity acceptor band in the conductivity of the doped and compensated ZrNiSn semiconductor is assessed. A reconstruction model of the impurity band as a result of doping the semiconductor with acceptor impurities is suggested. The electronic structure of the Zr_1-xSc_xNiSn alloy is calculated. Oscillations of the magnetic susceptibility in the region of the metal-insulator transition (related to the Anderson transition) as the Zr_1-xSc_xNiSn composition is varied are observed for the first time. These oscillations are believed to be a manifestation of the Coulomb gap in the impurity band as the levels of doping and compensation of the semiconductor are varied