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[en] Deep-level transient spectroscopy is used to study the dependence of the concentration of the donor-and acceptor-type radiation defects in silicon on the duration of irradiation with low-intensity fluxes of β particles (I ∼ 9 x 105 cm-2 s-1). It is found that the concentrations of the defects Ci, Ci-Cs, and/or V-O in n-Si and the defects V-B, Ci-Oi, and/or V2-O-C in p-Si vary nonmonotonically
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