[en] Temperature (for T = 77-400 K) and pressure (for P ≤ 8 GPa) dependences of conductivity σ(T,P). Hall coefficient R_H(T, P), and Seebeck coefficient Q(T) were studied in single-crystal n-ZnO samples with the impurity concentration N_i = 10¹⁷ - 10¹⁸ cm^-3 and free-electron concentration n = 10¹³-10¹⁷ cm^-3. Single crystals were grown by the hydrothermal method. Dependence of the ionization energy of a shallow donor level on the impurity concentration E_d1(N_d) is determined, along with the pressure coefficients for the ionization energy ∂E_d1/∂P and static dielectric constant ∂x/∂P. A deep defect level with the energy E_d2 = 0.3 eV below the bottom of the conduction band is found. The electron effective mass is calculated from the obtained data on the kinetic coefficients R_H(T) and Q(T)