[en] In recent years, a great interest in inorganic scintillators with fast luminescence decay time (about ten ns), high density and high light output has emerged, for application in nuclear physics, high energy physics, nuclear tomography and other fields of science and engineering. In this work, the growth of pure CsI crystals and CsI:Br using the Bridgman technique, is described. The concentration of the bromine doping element (Br) was studied in the range of 1.5x10^-1 M to 10^-2 M. To evaluate the scintillators developed, systematic measurements were carried out for luminescence emission and luminescence decay time for gamma radiation, optical transmittance assays, Vickers microhardness assays and analysis of crystals response to the gamma radiation in the energy range of 350 keV to 1330 keV. It was obtained 16 ns to 19 ns for luminescence decay time for CsI:Br crystals. These results were very promising. The results obtained for microhardness showed a significant increase in function of the doping elements concentration, when compared to the pure CsI crystal, increasing consequently the mechanical resistance of the grown crystals. The validity of using these crystals as radiation sensors may be seen from the results of their response to gamma. (author)