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AbstractAbstract
[en] The influence of the substrate temperature Tsub (20-360 deg. C) and the oxygen pressure P(O2) (5 x 10-3-0.13 Pa) in an evaporation chamber on the structure and phase composition of films prepared through laser sputtering of a vanadium target is investigated by electron diffraction and in situ transmission electron microscopy (with the use of the bend extinction contour technique for determining the bending of the crystal lattice). It is demonstrated that the oxygen content in the films increases with an increase in the oxygen pressure P(O2) at a fixed substrate temperature Tsub and decreases with an increase in the substrate temperature Tsub at a fixed oxygen pressure P(O2). The conditions responsible for the formation and composition of the crystalline (VO0.9) and amorphous (V2O3) phases in the films are determined. It is established that the phase composition of the film depends on the angle of condensation of the vapor-plasma flow. The crystallization of the V2O3 amorphous phase is accompanied by an increase in the density by 9.2%. It is revealed that the V2O3 spherulites growing in the amorphous film have a bent crystal lattice. The bending of the crystal lattice can be as large as ∼42 deg/μm
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Copyright (c) 2006 Nauka/Interperiodica; Article Copyright (c) 2006 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
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CHALCOGENIDES, COHERENT SCATTERING, CRYSTAL STRUCTURE, DIFFRACTION, ELECTROMAGNETIC RADIATION, ELECTRON MICROSCOPY, ELEMENTS, FLUIDS, GASES, METALS, MICROSCOPY, NONMETALS, OXIDES, OXYGEN COMPOUNDS, PHASE TRANSFORMATIONS, PHYSICAL PROPERTIES, RADIATIONS, SCATTERING, TRANSITION ELEMENT COMPOUNDS, TRANSITION ELEMENTS, VANADIUM COMPOUNDS
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