[en] Complete text of publication follows. Few approaches are known for extending investigations of amorphous chalcogenide layers towards the nanostructures, but the nanolayered, superlattice-like structures are the most investigated. Inserting the light sensitive amorphous layer between different barrier layers and changing the modulation period as well as the type of matrix (barriers) new effects are expected: enhanced interdiffusion, simple formation of solid solutions or stimulation of the solid-state reactions, crystallization and phase separation, a complex of related changes of optical and electrical parameters. The enhanced interdiffusion in the a- Se/As₂S₃ nano-multilayers, that can be considered as model ones, results in the giant volume expansion, so other combinations of materials or the influence of the technology, real structure on the above mentioned effects should be analyzed. The method of vacuum evaporation of different components and cyclic deposition of nanometer-thick sub-layers onto the same substrate was usually used up to now, but serious problems can arise from the non-stoichiometry of the deposited components. The thermal evaporation technology is not always applicable for producing barrier layers (especially oxides, organics), while the best and simplest technology for amorphous chalcogenide multilayer fabrication must ensure the possibility of simultaneous deposition of chalcogenide and the barrier layers. One of the relatively new methods for thin films preparation is pulsed laser deposition (PLD). When compared with vacuum thermal evaporation, magnetron sputtering, chemical vapour deposition techniques, etc., the PLD has several advantages-relative simplicity of the process, often nearly stoichiometric transfer of target material to the films, easy control of the process by laser operating parameters. In this work the effects of light- and thermally stimulated interdiffusion in Se/As₂S₃ nanomultilayers with modulation period of 6-9 nm fabricated by pulsed laser deposition and by the method of cyclic thermal evaporation (CTE) of the Se and As₂S₃ components were investigated by means of direct low-angle X-ray diffraction (LAXRD) measurements and by indirect methods of optical measurements. It was shown that we have developed the PLD method for preparing nanomultilayers from amorphous chalcogenides with improved structural characteristics (better periodicity and quality of interfaces) in comparison with thermal evaporation method. More pronounced nano-granular structure is characteristic for PLD samples but at the same time the interfaces are essentially sharpened, the periodicity and the initial blue-shift of the optical absorption edge are better in comparison with CTE samples. At the same time the important characteristics of stimulated changes of optical parameters remains the same as well as possibilities of applications for optical recording, formation of amplitude-phase and geometrical relief for optoelectronics. Such samples enables further investigations of the influence of structure formation at nano- and microscopic scale on optical parameters, diffusion and quantum size effects in amorphous structures