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Domashevskaya, E.P.; Kashkarov, V.M.; Seredin, P.V.; Terekhov, V.A.; Turishchev, S.Yu.; Arsentyev, I.N.; Ulin, V.P., E-mail: paul@phys.vsu.ru, E-mail: arsentyev@mail.ioffe.ru2008
AbstractAbstract
[en] The work is concerned with complex investigations of the layers of porous indium phosphide (por-InP) using X-ray diffraction and IR-spectroscopy, ultrasoft X-ray emission spectroscopy (USXES), spectroscopy of X-ray near-edge absorption fine structure XANES (X-ray absorption near-edge structure) and photoluminescence, obtained by anodic pulse electrochemical etching of single-crystalline plates of InP(1 0 0) of n-type conductivity (n ∼ 1018). The data obtained as a result of this work demonstrated that the surface layers of por-InP have cluster structure with the formation of InP quasi-molecules
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Source
E-MRS 2007: Symposium B on Semiconductor nanostructures towards electronic and optoelectronic device applications; Strasbourg (France); 28 May - 1 Jun 2007; S0921-5107(07)00515-6; Available from http://dx.doi.org/10.1016/j.mseb.2007.08.029; Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Literature Type
Conference
Journal
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology; ISSN 0921-5107;
; CODEN MSBTEK; v. 147(2-3); p. 144-147

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