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Yasui, Kanji; Asano, Akira; Otsuji, Miku; Katagiri, Hironori; Masuda, Atsushi; Nishiyama, Hiroshi; Inoue, Yasunobu; Takata, Masasuke; Akahane, Tadashi, E-mail: kyasui@vos.nagaokaut.ac.jp2008
AbstractAbstract
[en] We have investigated the deposition of Al-doped ZnO (AZO) films using a radio frequency (rf) magnetron sputtering apparatus with a mesh grid electrode. The improvement of the uniformity of crystallinity was achieved by the effect of the appropriate negative grid biases that suppress the impingement of charged particles onto the films surface. The uniformity of the electronic properties such as resistivity, carrier concentration and Hall mobility was also improved
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Source
STAC: 1. International conference on the science and technology for advanced ceramics; Kanagawa (Japan); 23-25 May 2007; JTMC: 2. International conference on joining technology for new metallic glasses and inorganic materials; Kanagawa (Japan); 23-25 May 2007; S0921-5107(07)00499-0; Available from http://dx.doi.org/10.1016/j.mseb.2007.09.016; Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Literature Type
Conference
Journal
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology; ISSN 0921-5107;
; CODEN MSBTEK; v. 148(1-3); p. 26-29

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