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AbstractAbstract
[en] Nd-doped ceria (NDC) thin film have been deposited on Si(100) substrate at temperature of 400oC using pulsed-laser ablation deposition technique (PLAD) in vacuum condition and at O2 pressure between 15 - 29 m Torr. X-ray diffraction, scanning electron microscope (SEM), and energy dispersive x-ray (EDX) analysis have been used to observed structures, thicknesses, and chemical compositions of the films. It was shown that O2 pressure during the deposition process affected crystallization, thickness, and atomic composition of the films. The obtained NDC thin film with compact structure and various compositions have proved that the PLAD technique has potency in making electrolyte thin films, which is important to solid oxide fuel cell (SOFC). (author)
Original Title
Deposisi Film Tipis Ceria Didadah Nd Menggunakan Teknik Pulsed-Laser Ablation Deposition (Plad)
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Source
10 refs., 5 figs.
Record Type
Journal Article
Journal
Jurnal Sains dan Teknologi Nuklir Indonesia; ISSN 1411-3481;
; v. 7(2); p. 123-130

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