[en] Silicon carbide (SiC) is a hopeful material for electronic devices to be operated crucial environment such as high-power, high temperature and high-radiation field because of high electric breakdown field, high saturation electron velocity and tolerance to high-temperature and radioactive field compared with silicon which is a popular electronic material. Among transition metals material of iron (Fe) is interesting for the electrodes such as a Schottky contact because of high electric contact resistance compared with other transition metals. Since most of analyses on interface reaction were destructively done, we have conducted a nondestructive approach to the characterization of the surface and the interface of metal/SiC contact system using a soft X-ray fluorescence spectroscopy (SXFS). A study of SXFS has characteristics that we can have information on the valence band density of states (VB-DOS) for different wave functions of different elements constructing a material under study due to the dipole selection rule in an electron transition to give rise to a photoemission. Therefore, we can obtain a specific signal for an element which can be used as a finger print, which is otherwise difficult. (author)