[en] We have patterned polymethyl methacrylate (PMMA) resist by exposing it to the fifth harmonic (213 nm) of an Nd:YAG source through metalized apertures in contact with the resist. Interference patterns with both near- and far-field origins were observed. In order to test the contrast and uniformity of exposure, we deposited germanium onto developed areas to form arrays with feature sizes of ∼200 nm. We present a straightforward model for interference effects generated in our process, and discuss opportunities for direct-write lithography through single apertures