[en] We have theoretically performed the detailed physical process and the temperature dependence of the hydrogen-enhanced amorphous-to-crystalline transformation of silicon upon plasma-enhanced chemical vapor deposition (PECVD) using the kinetic Monte Carlo simulations. It is found that the epitaxial silicon can be obtained at very low temperatures (T≥450 K) upon PECVD with H₂ dilution. Our simulations have profound implications for closing the gap between atomic-scale and macroscopic measurements and gaining a full understanding of PECVD growth