[en] Irradiation-induced amorphization in 6H-SiC has been previously studied as a function of irradiation temperature for electrons and ions ranging from Ne to Au. Analysis of these data with a dynamic model for amorphization reveals that the amorphization dose increases and the critical amorphization temperature decreases as the ratio of in-cascade ionization to displacement rates increases. Model fits to the data yield the ratio of radiation-induced recovery cross section, σ_r, to damage cross section, σ_d, and an activation energy of 0.12 ± 0.01 eV for irradiation-induced recovery. The critical temperature exhibits a linear dependence on 1/ln(σ_r/σ_d), consistent with the model