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AbstractAbstract
[en] We have developed fully depleted, back-illuminated CCDs that build upon earlier research and development efforts directed towards technology development of silicon-strip detectors used in high-energy-physics experiments. The CCDs are fabricated on the same type of high-resistivity, float-zone-refined silicon that is used for strip detectors. The use of high-resistivity substrates allows for thick depletion regions, on the order of 200-300 um, with corresponding high detection efficiency for near-infrared and soft x-ray photons. We compare the fully depleted CCD to the p-i-n diode upon which it is based, and describe the use of fully depleted CCDs in astronomical and x-ray imaging applications
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15 May 2006; 8 p; SNIC06: International Symposium on Detector Development for Particle, Astrophysics, and Synchrotron Radiation Experiments; Menlo Park, CA (United States); 3-6 Apr 2006; BNR: KA1503020; AC02-05CH11231; Also available from OSTI as DE00919255; PURL: https://www.osti.gov/servlets/purl/919255-SCMFmY/
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