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AbstractAbstract
[en] An IC semi-Gaussian shaper architecture for X-rays silicon strip detectors is presented. The specific structure is based on operational transconductance amplifiers (OTAs) and was implemented using an alternative design technique. The shaper was designed and fabricated in a 0.35 μm process by Austria Mikro Systeme and provides continuous variable operating bandwidth in a relatively low-frequency region, capability that indicates it as an optimum selection for a variety of readout applications. Analysis is supported by measurement results confirming the advantageous shaping filter performance. The circuit appears to be low power providing 530 μW power dissipation, while the output noise performance is 167 μV (rms) for an operating bandwidth of 260 kHz. Extensive experimental results concerning the total harmonic distortion and the dynamic range of the circuit also confirm its satisfactory performance
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S0168-9002(08)00313-6; Available from http://dx.doi.org/10.1016/j.nima.2008.02.048; Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment; ISSN 0168-9002;
; CODEN NIMAER; v. 589(2); p. 330-337

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