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AbstractAbstract
[en] Epitaxial SrRuO3/SrTiO3 (001) thin films with a TiN template layer have been deposited on Si(001) single crystal substrates by rf sputtering. The epitaxial orientation relationship was determined to be cube on cube with respect to Si and the crystal quality of the SrRuO3/SrTiO3 film is preserved even when the TiN template layer was oxidized into anatase phase of TiO2 during the sputtering process of SrRuO3. The effect of oxygen plasma on the oxidation and delamination of the TiN layer has been studied using transmission electron microscopy (TEM). The stress in the thin film of SrRuO3/SrTiO3/TiN structure was determined from the buckle shape in both plan view and cross-sectional TEM images. The critical stress and the compressive stress were estimated to be 2 and 4 GPa
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Source
(c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
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ALKALINE EARTH METAL COMPOUNDS, CHALCOGENIDES, CHEMICAL REACTIONS, CRYSTAL GROWTH METHODS, CRYSTALS, ELECTRON MICROSCOPY, ELEMENTS, FILMS, MICROSCOPY, NITRIDES, NITROGEN COMPOUNDS, NONMETALS, OXIDES, OXYGEN COMPOUNDS, PNICTIDES, PRESSURE RANGE, REFRACTORY METAL COMPOUNDS, RUTHENIUM COMPOUNDS, STRESSES, STRONTIUM COMPOUNDS, TITANATES, TITANIUM COMPOUNDS, TRANSITION ELEMENT COMPOUNDS
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