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AbstractAbstract
[en] Photoelectron emission microscopy (PEEM) excited by soft X-rays from synchrotron light source has been applied to observations on chemical-state-selective images at nanometer scale for micro-patterned silicon oxides on silicon. The micro-patterns of silicon oxides were prepared by O2+ ion implantation in Si(001) using a mask of 12.5 μm periodicity. By tuning the energy of X-rays, we have observed nano-scaled images of Si-SiOx micro-pattern depending only on the valence states of silicon. The interfaces between Si and SiO2 became dim upon heating, but only Si (Si0) and SiO2 (Si4+) were seen. It was elucidated that the annealing induces the hopping of Si valence states from Si0 to Si4+ without taking any intermediate valence states such as Si2+ and Si3+
Source
IVC-17: 17. international vacuum congress; Stockholm (Sweden); 2-6 Jul 2007; ICSS-13: 13. international conference on surface science; Stockholm (Sweden); 2-6 Jul 2007; ICN+T 2007: International conference on nanoscience and technology; Stockholm (Sweden); 2-6 Jul 2007; Available from http://dx.doi.org/10.1088/1742-6596/100/1/012015; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Literature Type
Conference
Journal
Journal of Physics. Conference Series (Online); ISSN 1742-6596;
; v. 100(1); [4 p.]

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