[en] Deposition of ITO as top transparent electrode was studied using two deposition systems with and without direct contact to working plasma; namely with conventional RF-magnetron planar (RSS) and pulsed-DC facing target sputtering systems (FTS). Test devices were made on glass substrates and consisted of (from bottom up) ITO/4 Organic Layers/ITO. Depositions were performed at low deposition powers; 30 and 60 watts, to reduce damages by energetic sputtered particles to underlying organic layers. Test devices from both sputtering systems were found to function well. Leakage current density at -5 V reverse bias were relatively constant from 0.3 and 0.4 mA/cm² at 30 W and 60 W in FTS, while the values were found to increase from 0.001 to 0.2 mA/cm² at 30 W and 60 W in RSS