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[en] A 2-dimensional simulation tool was designed to investigate the threshold voltage behaviour for a silicon nanowire constructed in a top down approach on silicon on insulator (SOI) material. The simulation shows, assuming a positive charge of +1·1011 cm-2 between the silicon/silicon dioxide interface and negatively charged surface states on top of the nanowire that the threshold voltage increases with decreasing height of the nanowire
Journal
Journal of Physics. Conference Series (Online); ISSN 1742-6596; 
; v. 100(5); [4 p.]
; v. 100(5); [4 p.]