[en] The type-IV diluted magnetic semiconductor (DMS) [Si(20 A)/Mn(x)]₃₀ multilayers (MLs) with nominal thickness x=1, 1.5, and 2.0 A have been prepared by molecular beam epitaxy. The structure, magnetism, and electrical property of these MLs were investigated. Above room temperature ferromagnetism has been observed and structure probed by x-ray absorption spectroscopy. The Mn local structure is similar to Si simulation and the Mn chemical valences of the MLs are in the range from zero (Mn foil) to Mn⁺². The relative carrier concentration is sensitive to the formation of room temperature ferromagnetism, suggesting that hole mediated mechanism play an important role in Si:Mn DMSs