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AbstractAbstract
[en] We report a study on the micro-structural changes in GaN due to neon ion implantation using the x-ray diffraction and Raman scattering techniques. An implantation dose of 1014 cm-2 was found unable to produce lattice deformation observable by Raman measurements. For higher doses of implantation several disorder activated Raman scattering centers were observed which corroborate the literature. A new dose dependent feature has been recorded at 1595 cm-1 for higher implantation doses which is suggested to be the vibrational mode of microcavities produced in the lattice
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Available from http://dx.doi.org/10.1088/0031-8949/77/03/035601; Country of input: International Atomic Energy Agency (IAEA)
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Journal Article
Journal
Physica Scripta (Online); ISSN 1402-4896;
; v. 77(3); [4 p.]

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