[en] Single crystals of CuInS₂ were prepared by chemical vapor transport (CVT) technique. The crystals were characterized structurally by X-ray diffraction and compositionally by microprobe analysis. Measurements of the electrical conductivity and Hall effect were carried out in a wide temperature range (130-580 K). From these measurements the conductivity of the crystals was p-type. The electrical conductivity, Hall mobility and hole concentration at 300 K were found to be about 5 x 10^-3 Ω^-1 cm^-1, 400 cm² v^-1 s^-1 and 7.1 x 10¹² cm^-3, respectively. The energy gap was found to be 1.51 eV. Also, the present investigation involves the thermoelectric power measurements in temperature range (130-540 K). The combination of the electrical and thermoelectric power measurements in the present investigation makes it possible to find various physical parameters